Search results for "Phonon coupling"
showing 10 items of 15 documents
Phonon coupling of non-bridging oxygen hole center with the silica environment: Temperature dependence of the 1.9 eV emission spectra
2008
Abstract We report an experimental study on the shape of the 1.9 eV emission associated with non-bridging oxygen hole centers in silica and its temperature dependence, from 4 up to 300 K, under visible and ultraviolet excitation. Our analysis points out that these defects are coupled with their environment by phonons whose contribution can be described by the single mode of mean frequency between 300–400 cm −1 and Huang–Rhys factor of ∼3. On increasing the temperature, the luminescence intensity undergoes a thermal quenching caused by non-radiative processes, its deviation from a pure Arrhenius law can be accounted for by an uniform distribution of activation energy, from 0.002 to 0.05 eV. …
Probing phonon dynamics with multidimensional high harmonic carrier-envelope-phase spectroscopy
2022
We explore pump-probe high harmonic generation (HHG) from monolayer hexagonal-Boron-Nitride, where a terahertz pump excites coherent optical phonons that are subsequently probed by an intense infrared pulse that drives HHG. We find, through state-of-the-art ab-initio calculations, that the structure of the emission spectrum is attenuated by the presence of coherent phonons, and is no longer comprised of discrete harmonic orders, but rather of a continuous emission in the plateau region. The HHG yield strongly oscillates as a function of the pump-probe delay, corresponding to ultrafast changes in the lattice such as bond compression or stretching. We further show that in the regime where the…
Thermal properties in low dimensional structures below 1 K
2009
In this thesis thermal properties of low dimensional structures were experimentally studied at low temperatures with the help of tunnel junction thermometry and the Joule heating technique. The main objects of study were electron-phonon coupling in disordered thin metal films and phonon transport in suspended silicon nitride membranes. Our aim has been to clarify the effect of the phonon dimensionality, i.e. the effect of boundaries to the phonon modes and the transition from 3D to 2D phonons. The dimensionality cross over had not been observed before this work even though it is fabricationally a standard procedure to create the low dimensional environments for nanoscale applications and de…
Phonon Driven Floquet Matter.
2018
The effect of electron–phonon coupling in materials can be interpreted as a dressing of the electronic structure by the lattice vibration, leading to vibrational replicas and hybridization of electronic states. In solids, a resonantly excited coherent phonon leads to a periodic oscillation of the atomic lattice in a crystal structure bringing the material into a nonequilibrium electronic configuration. Periodically oscillating quantum systems can be understood in terms of Floquet theory, which has a long tradition in the study of semiclassical light-matter interaction. Here, we show that the concepts of Floquet analysis can be applied to coherent lattice vibrations. This coupling leads to p…
Exciton-Phonon Coupling in the Ultraviolet Absorption and Emission Spectra of Bulk Hexagonal Boron Nitride
2018
We present an \textit{ab initio} method to calculate phonon-assisted absorption and emission spectra in the presence of strong excitonic effects. We apply the method to bulk hexagonal BN which has an indirect band gap and is known for its strong luminescence in the UV range. We first analyse the excitons at the wave vector $\overline{q}$ of the indirect gap. The coupling of these excitons with the various phonon modes at $\overline{q}$ is expressed in terms of a product of the mean square displacement of the atoms and the second derivative of the optical response function with respect to atomic displacement along the phonon eigenvectors. The derivatives are calculated numerically with a fin…
ELECTRON-PHONON COUPLING IN HEAVILY DOPED SILICON
2001
The coupling constant in electron-phonon interaction is a very important issue in nanoscale applications. We have measured this constant in heavily doped silicon. Electron-phonon interaction is proportional to T6 and the coupling constant is found to be 1.5 × 108 W/K5m³, which is about one tenth of the value in normal metals.
Direct Measurement of Electron-Phonon Coupling with Time-Resolved ARPES
2020
Time- and angular- resolved photoelectron spectroscopy is a powerful technique to measure electron dynamics in solids. Recent advances in this technique have facilitated band and energy resolved observations of the effect that excited phonons, have on the electronic structure. Here, we show with the help of ab initio simulations that the Fourier analysis of the time-resolved measurements of solids with excited phonon modes enables the determination of the band- and mode-resolved electron-phonon coupling directly from the experimental data without any additional input from theory. Such an observation is not restricted to regions of strong electron-phonon coupling and does not require strongl…
Electron-phonon heat transport in degenerate Si at low temperatures
2004
The thermal conductance between electrons and phonons in a solid state system becomes comparatively weak at sub‐Kelvin temperatures. In this work five batches of thin heavily doped silicon‐on‐insulator samples with the electron concentration in the range of 2.0–16 × 1019 cm–3 were studied. Below 1 K all the samples were in the dirty limit of the thermal electron‐phonon coupling, where the thermal phonon wavelength exceeds the electron mean free path. The heat flow between electrons and phonons is proportional to (T6e–T6ph), where Te (Tph) is the electron (phonon) temperature. The constant of proportionality of the heat flow strongly depends on the electron concentration and its magnitude is…
Electron–phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions
2002
Abstract Energy flow rate in degenerate n-type silicon-on-insulator (SOI) film is studied at low temperatures. The electrons are heated above the lattice temperature by electric field and the electron temperature is measured via semiconductor–superconductor quasiparticle tunneling. The energy flow rate in the system is found to be proportional to T 5 , indicating that electron–phonon relaxation rate and electron–phonon phase breaking rate are proportional to T 3 . The electron–phonon system in the SOI film is in the “dirty limit” where the electron mean free path is smaller than the inverse of the thermal phonon wave vector.
Luminescence from nearly isolated surface defects in silica nanoparticles
2015
A structured emission/excitation pattern, proper of isolated defects, arises in a vacuum from silica nanoparticles. The luminescence, centered around 3.0-3.5 eV, is characterised by a vibronic progression due to the phonon coupling with two localised modes of frequency ∼1370 cm(-1) and ∼360 cm(-1), and decays in about 300 ns at 10 K. On increasing the temperature, the intensity and the lifetime decrease due to the activation of a non-radiative rate from the excited state. Concurrently, the temperature dependence of the lineshape evidences the low coupling with non-localised modes of the matrix (Huang-Rhys factor S ~ 0.2) and the poor influence of the inhomogeneous broadening. These findin…